This article describes the basic measurement physics of scanning nitrogen vacancy (NV) microscopy and the various ways it can be used in semiconductor device failure analysis. Scanning NV microscopy can measure topography as well as magnetic fields, local current density, ac noise, and local temperature variations.

defect localization,local hotspots,nitrogen vacancy centers,scanning NV microscopy,scanning nitrogen vacancy,magnetometry,SNVM
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Scanning probe microscopy Semiconductor wafer fabrication Test method evaluation
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