Abstract
Probing in the sub-100 nm realm requires new tools and techniques that are relatively easy to learn if users follow the advice of the authors of this article. The authors present a probing method based on scanning probe technology and demonstrate its use on a 90-nm transistor failure due to a poly-silicon gate short. They also address challenges associated with sample preparation, probe tip contamination and wear, and the effects of vibration and drift.
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2006
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