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diffusion
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Journal Articles
EDFA Technical Articles(2007) 9 (4): 22–25.
Published:01 November 2007
... nanoprobe measurements. In this article, the authors show that exposing samples to electron beams with energies above 4 keV can change the value ofdiffusionresistors by as much as 30% and that changes can occur at even lower voltages in areas of the sample covered with less material. The article also...
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Nanoprobing of transistors and resistors is increasing in importance for both design debug and electrical fault isolation. It is thus necessary to understand the impact of scanning a resistor or transistor with an electron beam in order to draw valid conclusions from nanoprobe measurements. In this article, the authors show that exposing samples to electron beams with energies above 4 keV can change the value of diffusion resistors by as much as 30% and that changes can occur at even lower voltages in areas of the sample covered with less material. The article also sheds light on why the changes occur.
Journal Articles
EDFA Technical Articles(1999) 1 (4): 21–23.
Published:01 November 1999
..., nucleation, anddiffusion, all of which must be confirmed before attempting to make process corrections. Copyright © ASM International® 1999 1999 ASM International aluminum layer defects IC interconnects root-cause analysis stress voiding httpsdoi.org/10.31399/asm.edfa.1999-4.p021 Stress...
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Stress voiding is an insidious IC failure mechanism that can be difficult to identify and arrest. It is of particular concern to those who produce and test ICs with aluminum-alloy interconnects or who assess the reliability of legacy devices with long service life. This article explains how stress voids form and grow and how to determine the root cause by amassing physical evidence and ruling out other failure mechanisms. The key to differentiating stress voiding from other types of failures is recognizing that is the result of three distinct physical phenomena, stress, nucleation, and diffusion, all of which must be confirmed before attempting to make process corrections.
Journal Articles
EDFA Technical Articles(2000) 2 (1): 20–23.
Published:01 February 2000
... failures. Here, that information is applied in the analysis of an actual case of stress voiding. The author explains how he developed evidence of stress, nucleation, anddiffusion, the three phenomena required to differentiate stress voiding from other failure mechanisms, and how this evidence pointed...
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这是一个由两部分组成的系列文章的第二篇文章the causes of stress voiding and the evidence required to tie it to an IC interconnect failure. The first part, published in the November 1999 issue of EDFA, focuses on the causes and distinguishing characteristics of stress void failures. Here, that information is applied in the analysis of an actual case of stress voiding. The author explains how he developed evidence of stress, nucleation, and diffusion, the three phenomena required to differentiate stress voiding from other failure mechanisms, and how this evidence pointed to specific processing errors and suggested how to fix them. Although the investigation relied heavily on traditional observational tools, they were applied in new ways using a relatively new technique, FIB backside thinning, to gain critical proof of nucleation and confirm suspected processing errors.
Journal Articles
EDFA Technical Articles(2002) 4 (4): 29–33.
Published:01 November 2002
...Kristin Lee Bunker; Terry J. Stark; Dale Batchelor; Juan Carlos Gonzalez; Phillip E. Russell STEM-EBIC imaging, a nano-characterization technique, has been used in the study of electrically active defects, minority carrierdiffusionlength, surface recombination velocity, and inhomogeneities in Si...
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STEM-EBIC imaging, a nano-characterization technique, has been used in the study of electrically active defects, minority carrier diffusion length, surface recombination velocity, and inhomogeneities in Si pn junctions. In this article, the authors explain how they developed and built a STEM-EBIC system, which they then used to determine the junction location of an InGaN quantum well LED. They also developed a novel FIB-based sample preparation method and a custom sample holder, facilitating the simultaneous collection of Z-contrast, EBIC, and energy dispersive spectroscopy images. The relative position of the pn junction with respect to the quantum well was found to be 19 ± 3 nm from the center of well.
Journal Articles
EDFA Technical Articles(2011) 13 (1): 4–11.
Published:01 February 2011
..., and CTE mismatch. The investigation of the other failure revealed evidence of tin-whisker formation. As the author explains, the growth of tin whiskers is due to compressive stress in the tin solder material caused bydiffusionof end-cap metals (Ni and Cu) and the formation of Sn-Ni-Au intermetallics...
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This article presents two case histories that shed light on the role of gold in lead-free solder joint failures and the damage mechanisms involved. One of the failures, a brittle fracture of the solder joint, is attributed to the synergistic effects of voids, intermetallic compounds, and CTE mismatch. The investigation of the other failure revealed evidence of tin-whisker formation. As the author explains, the growth of tin whiskers is due to compressive stress in the tin solder material caused by diffusion of end-cap metals (Ni and Cu) and the formation of Sn-Ni-Au intermetallics. In both cases, the failures can be prevented by limiting the thickness of gold on all components.
Journal Articles
EDFA Technical Articles(2013) 15 (2): 22–30.
Published:01 May 2013
...,diffusion-related defects, and other features of interest in TEM samples. It also discusses related challenges and compares off-axis electron holography with other profiling techniques, particularly junction staining. Off-axis electron holography is a TEM-based imaging technique that reveals dopant...
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Off-axis electron holography is a TEM-based imaging technique that reveals dopant anomalies and junction profiles in semiconductor devices. This article explains how the method works and how it is being used to visualize transistor source-drain regions, diffusion-related defects, and other features of interest in TEM samples. It also discusses related challenges and compares off-axis electron holography with other profiling techniques, particularly junction staining.
Journal Articles
EDFA Technical Articles(2015) 17 (2): 32–33.
Published:01 May 2015
...Doug Hamilton; Phoumra Tan Lightly doped source-draindiffusionsare difficult if not impossible to delineate using wet chemical etching, but with a few process modifications and the use of edge shorting, a 20:1 HNO 3 /HF etch for 5 s at room temperature can reveal almost any junction profile...
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Lightly doped source-drain diffusions are difficult if not impossible to delineate using wet chemical etching, but with a few process modifications and the use of edge shorting, a 20:1 HNO 3 /HF etch for 5 s at room temperature can reveal almost any junction profile in a CMOS device. The relatively simple process is outlined in this installment of Master FA Technique, which also includes a series of images showing how well the method works.
Journal Articles
EDFA Technical Articles(2004) 6 (3): 20–30.
Published:01 August 2004
... Background All the pins of the specific bulk technology (0.13 µm, 1-2 -cm p-wafer) considered here were shown to be latchup resistant for positive current injection (majority carriers). In this case, any p-typediffusionconnected to the I/O pad typically gets forward biased and becomes the emitter/base...
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Latchup has long been a concern for CMOS technologies and is becoming more of an issue with the reduction of transistor dimensions and spacing. Although many techniques for avoiding the risk of latchup have been developed, they generally apply to specific technologies and are not portable to others. In light of the problem, IBM engineers conducted an in-depth evaluation of the structures most sensitive to latchup ignition and the many possible triggering mechanisms. In this article, they describe the work they performed along with the findings and provide practical guidelines on how to minimize latchup regardless of the IC technology involved.
Journal Articles
EDFA Technical Articles(2021) 23 (2): 22–32.
Published:01 May 2021
... of LSM-YSZ interactions or more thorough zirconate phase formations were achieved in a relatively short time. However, in these studies critical information concerning early phase nucleation and their associated atomicdiffusionmechanisms is not available due to the testing conditions. In this study...
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Long-term stability studies indicate that cathode degradation is one of the main failure mechanisms in anode-supported SOFCs. In order to better understand the microstructural degradation mechanisms of the cathode and the influence of oxygen partial pressure at relevant operating temperatures, the authors of this article acquired TEM samples from technological cells to study cation interdiffusion mechanisms and LSM-YSZ interactions, particularly in areas where LSM grains are in contact with YSZ electrolyte. Here they present and interpret the results.
Journal Articles
EDFA Technical Articles(2016) 18 (2): 16–27.
Published:01 May 2016
... charge with the FinFET geometry. Charge collection resulting from the impact of an energetic particle with the silicon substrate occurs by two mechanisms: Charge drift in the drain region when the ion track crosses the drain directly Chargediffusionvia the p-n junction to the drain region when...
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This article reviews recent work aimed at characterizing soft-error effects in SRAM circuits fabricated with bulk silicon FinFETs. Accelerated tests were conducted on 6T planar and FinFET-based SRAM cells by exposing them to high-energy neutrons and alpha particles. Based on test results and simulations, the authors show that soft-error rates are much lower in FinFET devices because the geometry of the fins limits charge collection.
Journal Articles
Laser Voltage Probe (LVP): A Novel Optical Probing Technology for Flip-Chip Packaged Microprocessors
EDFA Technical Articles(2000) 2 (3): 20–25.
Published:01 August 2000
... fast and direct 20 access todiffusion(P-N junction) nodes directly through the silicon substrate. Since extrinsic silicon is partially transparent to IR light, an IR laser beam at a wavelength of 1064nm can be focused through the silicon substrate onto a P-N junction in a flip-chip packaged CMOS IC...
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激光探测电压(LVP),一个想法technique, facilitates through-silicon signal waveform acquisition and high frequency timing measurements from active p-n junctions on CMOS ICs. The ICs can be in flip-chip as well as wire-bond packages with backside access to the IC. As the article explains, LVP significantly improves silicon debug and failure analysis throughput time compared to electron-beam probing because it eliminates the need for backside trenching and probe-hole generating operations.
Journal Articles
EDFA Technical Articles(2012) 14 (1): 14–20.
Published:01 February 2012
... qualitative model of tin whisker growth, K.N. Tu presented three necessary conditions for spontaneous tin whisker growth in the tin-copper system.[5] First, grain-boundarydiffusionof copper in tin must occur. Second, the copperdiffusionleads to the formation of copper-tin intermetallic compounds (IMCs...
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Tin whiskers are single-crystal filaments that can grow from tin-plated copper or nickel components. This article discusses the effect of plating thickness, composition, and grain size on tin whisker formation and explains how to assess damage potential based on microanalysis, whisker length distribution models, and metal vapor arc risk factors. The authors also present and analyze several examples of failures caused by tin whisker formation in space systems.
Journal Articles
EDFA Technical Articles(2012) 14 (4): 4–11.
Published:01 November 2012
...diffusermetal contamination in CCDbased sensors.[10] More recently, the authors applied this technique for the identification of both gold fastdiffuserand tungsten slowdiffusercontamination in CMOS image sensors.[6,7] With a model based on the Fig. 2 Photodiode and transfer gate sideview with silicon...
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This article discusses the basic principles of dark current spectroscopy (DCS), a measurement technique that can detect and identify low levels of metal contaminants in CMOS image sensors. An example is given in which DCS is used to determine the concentration of tungsten and gold contaminants in an image sensor and estimate the dark current generated by a single atom of each metal.
Journal Articles
EDFA Technical Articles(2009) 11 (2): 16–22.
Published:01 May 2009
... is thediffusivemotion of stay-in charge carriers, which are the difference between injected charge carriers by incident electrons and emissive charge carriers such as secondary electrons, to maintain charge neutrality in a device. A remarkable report on the application of AE detection to FA was published in 1986...
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This article discusses the advantages of SEM-based nanoprobing and the various ways it can be used to locate defects associated with IC failures. It describes the basic measurement physics of electron beam induced current, absorbed electron, and voltage distribution contrast imaging and presents examples showing how the different methods are used to isolate low- and high-resistance sites, shorts, and opens as well as ion implantation and metal patterning defects.
Journal Articles
EDFA Technical Articles(2015) 17 (3): 30–34.
Published:01 August 2015
... eponymous effect in 1947, in a research experiment at Wayne University involving copper and zincdiffusionin brass. His finding, controversial at the time, was that solids whichdiffusedinto one another could have unequaldiffusionrates. This simple concept has repercussions for a variety of materials...
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This article presents a case study of an IC failure that occurred in a downhole drilling environment. It describes the tests and examinations that were performed and explains how investigators determined that the Kirkendall effect contributed to the failure.
Journal Articles
EDFA Technical Articles(1999) 1 (3): 1–28.
Published:01 August 1999
... for the base and the p substrate for the collector. A NPN transistor can be formed with an n+ emitter at the silicon surface, a p+diffusionsurrounding the n+ emitter forming the base, and an enclosing n-well with an (See Mixed-signals, page 25) ELECTRONIC DEVICE FAILURE ANALYSIS NEWS Mixed Signals Mixed...
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This article discusses the challenges involved in testing analog and mixed-signal ICs and provides practical guidance and insights on how to deal with them.
Journal Articles
EDFA Technical Articles(2007) 9 (4): 14–19.
Published:01 November 2007
... profiles indiffusionstudies. In this case, a depth resolution of approximately 10 nm can be obtained in standard conditions. Because the Rutherford differential cross section is well known from theory, the method does not need a reference standard to become quantitative, and 5% absolute precision...
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Microelectronics failure analysis is based on several approaches to study and understand the origin of failure. In addition to “classic” elemental methods (SIMS, ESCA, etc.), there are a number of less-common techniques that can be valuable but require significant equipment investment, specialized operators, and administrative infrastructure to make them available to analysts, if needed. Ion beam analysis methods (RBS, PIXE, NRA), found at the Bordeaux Nuclear Research Center (France), are examples of these specialized tool sets. The capabilities and improved sensitivities of this site for device examination are demonstrated by several examples.
Journal Articles
EDFA Technical Articles(2017) 19 (2): 10–20.
Published:01 May 2017
... because a thermal positron candiffuseapproximately 100 nm in the bulk of a material, and so each can probe a large number of lattice sites. Furthermore, positrons annihilate with only the easily POSITRONS TEND TO BECOME TRAPPED IN REGIONS OF HIGH ELECTRONEGATIVITY, SUCH AS IN DISLOCATIONS, VACANCIES...
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正电子能谱可以识别缺陷深度within metals and semiconductors with a resolution better than a single atomic lattice site. This article discusses the basic principles and implementation of positron annihilation spectroscopy and a key development that makes it more a more useful tool for semiconductor applications.
Journal Articles
EDFA Technical Articles(2000) 2 (1): 1–9.
Published:01 February 2000
...-induced generation currents originate. As these carriers drift across the junction and recombine, the resultant CUITent enables delineation of thediffusionboundary. In regions where defects are within the junction, or within adiffusionlength of the junction, thc recombination will bc enhanced...
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Electron beam induced current (EBIC) analysis is a versatile tool that can be used by anyone with access to a SEM. This article explains how failure analysts are using the EBIC mode in SEMs to detect junction and oxide defects, simplify junction delineation, and reveal subsurface damage through multiple layers of metallization.
Journal Articles
EDFA Technical Articles(2009) 11(3): 6 - 12。
Published:01 August 2009
... of approximately 250 nm, is formed bydiffusionof phosphorus into the wafer. The resulting p-n junction is covered by a silicon nitride layer that acts as an antireflection coating on the n+ side. The contacts to collect the current from the solar cell are made by a grid of silver lines on the frontside...
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Lock-in thermography (LIT) is a powerful fault isolation and characterization tool for solar cell ICs. This article describes the basic LIT imaging process on silicon wafer-based solar cells as well as its various modes, applications, and results.
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