Advancements in photodetector technology are revitalizing time-resolved emission (TRE) techniques in semiconductor failure analysis. In this article, the authors explain how superconducting single-photon detectors improve the capabilities of TRE measurements as demonstrated on 14 nm FinFET technology and an inverter chain with power supply voltages down to 0.4 V.

low-voltage ICs, superconducting photodetectors, time-resolved emission, TRE measurements
This content is only available as a PDF.
Copyright © ASM International® 2016
2016
ASM International
Topics
Semiconductor wafer fabrication
You do not currently have access to this content.