Advantages and Challenges of 3-D Atom Probe Tomography Characterization of FinFETs

This article provides an overview of atom probe tomography (APT) and its use in semiconductor FA and new product development. It discusses the basic components in an atom probe, the making of APT tips, and the general approach for data collection and reconstruction. It also includes a case study in which 3D atom probe techniques are used to map dopant profiles and identify defects in the source-drain region of SiGe FinFET transistors.