Engineers at the Fraunhofer Institute for Microstructure of Materials and Systems built and are testing a scanning acoustic microscope (SAM) that operates at frequencies of up to 2 GHz. Here they describe the design of their GHz-SAM and present examples showing how it is used to detect stress induced voids, inspect wire bond interfaces, and examine through-silicon vias (TSVs) in the time-resolved mode.

GHz-SAM, scanning acoustic microscopy, stress induced voids, through-silicon vias, wire bond interfaces
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2018
ASM International
Topics
Scanning acoustic microscopy Semiconductor wafer fabrication Test method evaluation
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