Electron beam induced current (EBIC) analysis is a versatile tool that can be used by anyone with access to a SEM. This article explains how failure analysts are using the EBIC mode in SEMs to detect junction and oxide defects, simplify junction delineation, and reveal subsurface damage through multiple layers of metallization.

EBIC analysis, EOS damage, fault isolation, junction delineation, oxide defects
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Topics
Semiconductor wafer fabrication Scanning electron microscopes
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