This article describes two innovative methods that can significantly improve the resolution of SEM imaging: scanning transmission electron microscopy in a scanning electron microscope (STEM-in-SEM) and forward-scattered electron imaging (FSEI). Both methods can be implemented in any SEM using special sample holders. No other modifications are required. Test results presented in the article show that 1 to 2 nm resolution is possible in thin sections, uncoated polysilicon gates, and photoresist.

forward-scattered electron imaging, image resolution, scanning electron microscopes, STEM-in-SEM
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Copyright © ASM International® 2004
2004
ASM International
Topics
Scanning transmission electron microscopy Semiconductor wafer fabrication Scanning electron microscopes
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