Secondary Electron Potential Contrast in Wide-Bandgap Semiconductors: More Than Just Dopant Profiling with the SEM

Dopant profiles in submicron silicon devices are typically measured using scanning probe techniques. A new SEM-based method has recently emerged, however, that could prove to be a more powerful tool for quantitative dopant imaging. This article discusses the measurement physics of secondary electron potential contrast imaging and assesses its capabilities based on the analysis of SiC power transistors, vertical cavity surface emitting lasers, and quantum well devices.