This article discusses the advantages of SEM-based nanoprobing and the various ways it can be used to locate defects associated with IC failures. It describes the basic measurement physics of electron beam induced current, absorbed electron, and voltage distribution contrast imaging and presents examples showing how the different methods are used to isolate low- and high-resistance sites, shorts, and opens as well as ion implantation and metal patterning defects.

absorbed electron imaging, EBIC imaging, fault localization, SEM-based nanoprobing, voltage distribution contrast
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Copyright © ASM International® 2009
2009
ASM International
Topics
Semiconductor wafer fabrication Test method evaluation Scanning electron microscopes
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