Comparison of Off-Axis Electron Holography and Junction Staining of TEM Sections for Dopant Anomaly Visualization

Off-axis electron holography is a TEM-based imaging technique that reveals dopant anomalies and junction profiles in semiconductor devices. This article explains how the method works and how it is being used to visualize transistor source-drain regions, diffusion-related defects, and other features of interest in TEM samples. It also discusses related challenges and compares off-axis electron holography with other profiling techniques, particularly junction staining.