Scanning capacitance microscopy (SCM) and nanoprobing are key tools for isolating and understanding transistor level fails. In this case study, SCM and nanoprobing are used to determine the electrical characteristics of cluster-type failures in 14 nm SOI FinFET SRAM after standard FIB cross-section imaging failed to reveal any visible defects.

defect isolation, nanoprobing, scanning capacitance microscopy, SOI FinFETs
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2020
ASM International
Topics
Scanning probe microscopy Semiconductor wafer fabrication Test method evaluation
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