This article describes a form of lock-in thermography that achieves 3D localization of thermally active defects in stacked die packages. In this approach, phase shifts associated with thermal propagation delay are analyzed as a function of frequency. This allows for a precise localization of defects in all three spatial dimensions and can serve as a guide for subsequent high-resolution physical analyses.

hot spot localization, lock-in thermography, phase shift analysis, stacked dies, time resolved temperature response
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2020
ASM International
Topics
Electronic packaging Semiconductor wafer fabrication Thermography Test method evaluation
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