Modified Talbot X-ray interferometry provides three contrast modes simultaneously: absorption, phase, and dark field/scattering. This article describes the powerful new imaging technique and shows how it is used to characterize various types of defects in advanced semiconductor packages.

advanced packages, dark field imaging, defect characterization, phase contrast imaging, X-ray interferometry
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Copyright © ASM International® 2020
2020
ASM International
Topics
Electronic packaging Phase contrast microscopy X-ray microtomography Semiconductor wafer fabrication
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