Scanning microwave impedance microscopy (sMIM) is an electrical measurement technique that can be used to determine dopant profiles in semiconductor devices. This article describes the basic setup and implementation of the method and demonstrates its use in the cross-sectional analysis of NMOS power transistors.

cross-sectional analysis, dopant profiling, scanning microwave impedance microscopy
This content is only available as a PDF.
Copyright © ASM International® 2017
2017
ASM International
Topics
Microscopy Semiconductor wafer fabrication Test method evaluation
You do not currently have access to this content.