Nanoscale Capacitance and Capacitance-Voltage Curves for Advanced Characterization of Electrical Properties of Silicon and GaN Structures Using Scanning Microwave Impedance Microscopy (sMIM)

Scanning microwave impedance microscopy (sMIM) is a relatively new method for making electrical measurements on test samples in AFMs. This article presents examples in which sMIM technology is used to measure dielectric coefficients, doping concentrations, and nanoscale C-V curves for different semiconductor and dielectric materials. It also explains how measured results compare with theoretical models, confirming the validity of each approach.